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FPD750DFN
LOW NOISE HIGH LINEARITY PACKAGED PHEMT
FEATURES (1850MHZ):
* * * * * * 24 dBm Output Power (P1dB) 20 dB Small-Signal Gain (SSG) 0.3 dB Noise Figure 39 dBm Output IP3 at 50% Bias 45% Power-Added Efficiency RoHS compliant
Datasheet v3.0
PACKAGE:
RoHS
GENERAL DESCRIPTION:
The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepperbased photolithography. The recessed and offset Gate structure minimizes parasitics to optimize performance, with an epitaxial structure designed for improved linearity over a range of bias conditions and input power levels.
TYPICAL APPLICATIONS:
* * * Drivers or output stages in PCS/Cellular base station transmitter amplifiers High intercept-point LNAs WLL and WLAN systems, and other types of wireless infrastructure systems.
ELECTRICAL SPECIFICATIONS:
PARAMETER
Power at 1dB Gain Compression Small-Signal Gain
SYMBOL
P1dB SSG
CONDITIONS
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 50% IDSS
MIN
22.5 19
TYP
24 20
MAX
UNITS
dBm dB
Power-Added Efficiency
PAE
VDS = 5 V; IDS = 50% IDSS; POUT = P1dB
45
%
Noise Figure
NF
VDS = 5 V; IDS = 50% IDSS VDS = 5 V; IDS = 25% IDSS
0.7 0.3
1.1 0.9
dB
Output Third-Order Intercept Point (from 15 to 5 dB below P1dB)
IP3
VDS = 5V; IDS = 50% IDSS Matched for optimal power Matched for best IP3 37 39 180 230 375 200 1 0.7 12 12 1.0 16 16 15 1.3 280 mA mA mS A V V V dBm
Saturated Drain-Source Current Maximum Drain-Source Current Transconductance Gate-Source Leakage Current Pinch-Off Voltage Gate-Source Breakdown Voltage Gate-Drain Breakdown Voltage
IDSS IMAX GM IGSO |VP| |VBDGS| |VBDGD|
VDS = 1.3 V; VGS = 0 V VDS = 1.3 V; VGS +1 V VDS = 1.3 V; VGS = 0 V VGS = -5 V VDS = 1.3 V; IDS = 0.75 mA IGS = 0.75mA IGD = 0.75 mA
Note: TAMBIENT = 22; RF specification measured at f = 1850 MHz using CW signal (except as noted) 1
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
ABSOLUTE MAXIMUM RATING :
PARAMETER
Drain-Source Voltage Gate-Source Voltage Drain-Source Current Gate Current 2 RF Input Power Channel Operating Temperature Storage Temperature Total Power Dissipation Gain Compression 3 Simultaneous Combination of Limits 2 or more Max. Limits PIN TCH TSTG PTOT Comp. Under any acceptable bias state Under any acceptable bias state Non-Operating Storage See De-Rating Note below Under any bias conditions 175mW 175C -55C to 150C 1.5W 5dB
1
SYMBOL
VDS VGS IDS IG
TEST CONDITIONS
-3V < VGS < +0V 0V < VDS < +8V For VDS > 2V Forward or reverse current
ABSOLUTE MAXIMUM
8V -3V IDss 7.5mA
Notes: 1 TAmbient = 22C unless otherwise noted; exceeding any one of these absolute maximum ratings may cause permanent damage to the device 2 Max. RF Input Limit must be further limited if input VSWR > 2.5:1 3 Users should avoid exceeding 80% of 2 or more Limits simultaneously 4 Total Power Dissipation defined as: PTOT (PDC + PIN) - POUT, where PDC: DC Bias Power, PIN: RF Input Power, POUT: RF Output Power Total Power Dissipation to be de-rated as follows above 22C: PTOT= 1.5 - (0.011W/C) x TPACK where TPACK= source tab lead temperature above 22C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 65C carrier temperature: PTOT = 1.5W - (0.011 x (65 - 22)) = 1.03W 5 The use of a filled via-hole directly beneath the exposed heatsink tab on the bottom of the package is strongly recommended to provide for adequate thermal management. Ideally the bottom of the circuit board is affixed to a heatsink or thermal radiator
BIASING GUIDELINES:
* Active bias circuits provide good performance stabilisation over variations of operating temperature, but require a larger number of components compared to self-bias or dual-biased. Such circuits should include provisions to ensure that Gate bias is applied before Drain bias, otherwise the pHEMT may be induced to self-oscillate Dual-bias circuits are relatively simple to implement, but will require a regulated negative voltage supply for depletion-mode devices. For standard Class A operation, a 50% of IDSS bias point is recommended. A small amount of RF gain expansion prior to the onset of compression is normal for this operating point. Note that pHEMTs, since they are "quasi- E/D mode" devices, exhibit Class AB traits when operated at 50% of IDSS. To achieve a larger separation between P1dB and IP3, an operating point in the 25% to 33% of IDSS range is suggested. Such Class AB operation will not degrade the IP3 performance.
* *
2
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
TYPICAL TUNED RF PERFORMANCE:
FPD750DFN Biased @ VD = 5V ID = 50%IDSS
35
MSG
FPD750DFN Biased @ VD = 5V, ID = 50%IDSS
2 1.75 1.5 Noise Fugure (dB) 1.25 1 0.75 0.5
30
S21
MSG Mag S21 &
25 20 15 10 5 0 0.4 1.4 2.4 3.4 4.4 5.4 6.4 7.4 Frequency (GHz) 8.4 9.4 10.4 11.412
0.25 0 0.5 1 1.5 2 2.5 3 3.5 4 Frequency (GHz) 4.5 5 5.5 6
TYPICAL I-V CHARACTERISTICS:
DC IV Curves FPD750SOT89
0.30
0.25
Drain-Source Current (A)
0.20
0.15
0.10
VG=-1.50 VG=-1.25V VG=-1.00V VG=-0.75V VG=-0.50V VG=-0.25V VG=0V
0.05
0.00 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Drain-Source Voltage (V)
Note: The recommended method for measuring IDSS, or any particular IDS, is to set the Drain-Source voltage (VDS) at 1.3V. This measurement point avoids the onset of spurious self-oscillation which would normally distort the current measurement (this effect has been filtered from the I-V curves presented above). Setting the VDS > 1.3V will generally cause errors in the current measurements, even in stabilised circuits. Recommendation: Traditionally a device's IDSS rating (IDS at VGS = 0V) was used as a predictor of RF power, and for MESFETs there is a correlation between IDSS and P1dB (power at 1dB gain compression). For pHEMTs it can be shown that there is no meaningful statistical correlation between IDSS and P1dB; specifically a linear regression analysis shows r2 < 0.7, and the regression fails the F-statistic test. IDSS is sometimes useful as a guide to circuit tuning, since the S22 does vary with the quiescent operating point IDS.
3
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
TYPICAL OUTPUT PLANE CONTOURS (VDS = 5V, IDS = 50%IDSS):
FPD750DFN POWER CONTOURS 900MHz
0.8 0.6 2.0 0.4 3.0 4.0 5.0 0.2 10.0 10. 022dBm 1. 0
Swp Max 168
0
0. 2
0.4
0.6
0.8 1.0
2.0
25dBm
-0.2
24dBm 23dBm
3.0 4. 5.0 0
21dBm 20dBm
-10.0
-5.0 -4.0 -3.0 -0.4 2.0 0.8 1.0
0.6
Swp Min 1
FPD750DFN POWER CONTOURS 1850MHz
0. 8 0. 6 0.4 3.0 4.0 5.0 0.2 1. 0 2. 0
Swp Max 180
22dBm
10.0 0. 2 0. 4 0. 6 0. 8 1. 0 2. 0 3. 4. 5. 00 0 10 .0
0
25dBm
-10.0 -0.2
20dBm
24dBm 23dBm
-0.4 2. 0 0. 8 1. 0
21dBm -5.0
-4.0 -3.0
0. 6
Swp Min 1
4
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
NOISE PARAMETERS:
Bias 3V, 50%IDSS Freq (GHz) 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 Mag 0.509 0.404 0.408 0.402 0.375 0.349 0.302 0.281 0.264 0.244 0.265 0.303 0.312 0.342 opt Angle 20.5 52.8 56.5 61.7 70.3 74.1 84.4 96.7 116.1 137.0 162.8 168.7 -176.1 -165.0 0.082 0.074 0.070 0.067 0.064 0.066 0.064 0.060 0.055 0.056 0.051 0.043 0.049 0.060 Bias 5V, 25%IDSS Freq (GHz) 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 Mag 0.520 0.465 0.471 0.458 0.435 0.423 0.355 0.327 0.298 0.246 0.245 0.271 0.279 0.295 opt Angle 16.1 36.4 47.4 52.0 60.0 62.1 71.6 80.7 97.0 116.3 144.0 149.5 171.0 176.4 0.079 0.148 0.069 0.068 0.065 0.067 0.064 0.060 0.056 0.057 0.051 0.041 0.042 0.053
Rn/50
Rn/50
Bias 5V, 50%IDSS Freq (GHz) 0.900 1.800 2.000 2.200 2.400 2.600 2.800 3.000 3.500 4.000 4.500 5.000 5.500 6.000 Mag 0.512 0.400 0.403 0.385 0.362 0.344 0.299 0.284 0.264 0.236 0.263 0.298 0.323 0.326 opt Angle 21.8 52.8 57.5 63.2 72.0 76.1 86.7 98.0 117.5 139.7 163.7 171.9 -165.6 -163.6 0.096 0.084 0.080 0.077 0.074 0.075 0.072 0.068 0.062 0.064 0.058 0.051 0.062 0.075
Rn/50
5
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
S-PARAMETERS (BIASED @ 5V, 50%IDSS):
FREQ[GHz] 0.400 0.650 0.900 1.150 1.400 1.650 1.900 2.150 2.400 2.650 2.900 3.150 3.400 3.650 3.900 4.150 4.400 4.650 4.900 5.150 5.400 5.650 5.900 6.150 6.400 6.650 6.900 7.150 7.400 7.650 7.900 8.150 8.400 8.650 8.900 9.150 9.400 9.650 9.900 10.150 10.400 10.650 10.900 11.150 11.400 11.650 11.900 S11m 0.987 0.906 0.863 0.825 0.794 0.770 0.753 0.741 0.732 0.724 0.720 0.713 0.710 0.700 0.703 0.694 0.703 0.690 0.683 0.687 0.696 0.699 0.705 0.709 0.715 0.721 0.726 0.729 0.731 0.733 0.739 0.743 0.750 0.755 0.761 0.768 0.779 0.782 0.791 0.805 0.804 0.807 0.813 0.821 0.831 0.845 0.858 S11a -36.5 -58.0 -76.9 -93.8 -108.7 -121.7 -133.2 -143.2 -152.1 -159.8 -166.8 -172.7 -178.4 176.6 171.4 166.9 161.1 156.4 151.2 146.8 141.5 136.3 131.1 126.2 121.8 117.6 113.6 110.0 106.8 104.0 100.9 98.3 95.3 92.3 89.1 85.7 81.9 77.8 73.9 69.3 64.7 60.7 57.1 53.6 50.3 47.2 43.9 S21m 17.890 16.489 14.905 13.369 11.976 10.761 9.713 8.828 8.065 7.416 6.864 6.398 5.991 5.643 5.308 5.058 4.815 4.649 4.422 4.199 4.033 3.855 3.694 3.527 3.367 3.224 3.083 2.933 2.801 2.692 2.601 2.516 2.443 2.373 2.315 2.256 2.205 2.149 2.115 2.066 1.973 1.899 1.833 1.776 1.718 1.669 1.635 S21a 156.1 140.4 128.5 118.1 109.1 101.1 94.1 87.6 81.9 76.5 71.5 66.8 62.2 58.0 53.6 49.7 45.1 41.3 35.6 32.0 27.7 23.5 19.0 14.8 10.8 6.8 2.7 -1.0 -4.3 -7.5 -10.8 -14.0 -17.4 -20.7 -24.3 -27.8 -31.5 -35.4 -39.4 -44.4 -48.7 -52.5 -56.1 -59.6 -63.2 -66.6 -70.4 S12m 0.017 0.025 0.031 0.036 0.039 0.043 0.044 0.046 0.047 0.048 0.049 0.051 0.052 0.053 0.054 0.054 0.056 0.058 0.058 0.058 0.060 0.062 0.062 0.064 0.064 0.064 0.065 0.064 0.064 0.064 0.064 0.066 0.068 0.069 0.071 0.075 0.077 0.080 0.084 0.086 0.087 0.087 0.089 0.091 0.091 0.093 0.094 S12a 72.2 60.3 51.8 44.8 39.4 35.2 30.6 27.7 24.9 23.2 19.9 18.2 15.3 13.5 13.2 10.4 10.5 7.8 3.8 4.2 0.8 -0.8 -3.1 -6.4 -9.4 -11.5 -14.1 -16.3 -18.7 -19.0 -20.2 -21.4 -21.9 -22.7 -25.0 -26.4 -28.9 -30.6 -33.7 -37.3 -40.7 -43.2 -45.3 -48.0 -50.4 -52.7 -54.3 S22m 0.392 0.335 0.311 0.287 0.266 0.246 0.228 0.212 0.198 0.185 0.174 0.166 0.160 0.152 0.158 0.150 0.154 0.157 0.167 0.158 0.159 0.158 0.162 0.165 0.166 0.167 0.169 0.173 0.172 0.172 0.177 0.185 0.196 0.209 0.221 0.239 0.257 0.276 0.299 0.320 0.337 0.350 0.361 0.374 0.385 0.394 0.398 S22a -29.3 -46.1 -60.1 -72.4 -82.9 -91.7 -99.5 -106.8 -113.7 -120.5 -126.8 -133.4 -140.4 -145.6 -152.6 -158.5 -161.5 -167.5 -173.1 -179.6 177.3 173.8 170.1 164.5 158.7 152.8 146.4 139.2 131.7 125.5 120.8 116.1 111.4 107.8 104.8 102.5 100.2 98.4 96.1 93.8 90.6 88.1 85.8 83.2 80.3 77.0 73.2
6
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
REFERENCE DESIGN (5.3 - 5.9GHZ):
-Vg
1.0uF
Vd
1.0uF 15pF
FPD750DFN EVAL Board Schematic
15pF 20 Ohm Z10 Z9 Z15 Z14
1 3
Z16
15pF
1
Z1
2 4 3 1
Z5
2 4 3 1
Z8
2 4
15pF Z18 Z19
RF OUT (50 Ohm)
RF IN (50 Ohm)
Z0
Z2 Z1
Z3
Z4 Z5
Z6
Z7 Z8
Z11
Z12
2 4
3
Z13 Z17 Z14
Desc. Z0 Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z16 Z11, Z12 Z13 Z14 Z15 Z17 Z18 Z19
Value 0.045" x 0.050" Microstrip 0.020" x 0.500" Microstrip W1=0.020" W2=0.020" W3=0.020" W4=0.020" Microstrip Cross 0.020" x 0.030" Microstrip W1=0.020" W2=0.052" W3=0.020" W4=0.052" Microstrip Cross 0.052" x 0.94" Microstrip 0.020" x 0.285" Microstrip W1=0.020" W2=0.054" W3=0.020" W4=0.054" Microstrip Cross 0.054" x 0.170" Microstrip 0.015" x 0.162" Microstrip 0.310" x 90 Microstrip Radial Stub 0.280" x 90 Microstrip Radial Stub 0.012" x 0.037" Microstrip W1=0.022" W2=0.040" W3=0.022" W4=0.040" Microstrip Cross 0.040" x 0.075" Microstrip 0.015" x 0.257" Microstrip 0.022" x 0.140" Microstrip 0.110" x 0.030" Microstrip 0.030" x 0.100" Microstrip
PARAMETER
Frequency Gain P1dB N.F. S11 S22 Vd Vg Id
UNIT
GHz dB dBm dB dB dB V V mA
PERFORMANCE
5.3 to 5.9 13.5 24 1.2 -8 -10 5 -0.4 to -0.7 100
7
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
EVALUATION BOARD:
PCB FOOTPRINT:
8
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com
FPD750DFN
Datasheet v3.0
PACKAGE OUTLINE:
(dimensions in millimetres - mm)
PREFERRED ASSEMBLY INSTRUCTIONS:
Available on request.
DISCLAIMERS:
This product is not designed for use in any space based or life sustaining/supporting equipment.
HANDLING PRECAUTIONS:
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 0 (0250 V) as defined in JEDEC Standard No. 22A114. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
ORDERING INFORMATION:
PART NUMBER
FPD750DFN EB750DFN-BB EB750DFN-BA EB750DFN-BC EB750DFN-BE
DESCRIPTION
Packaged pHEMT Packaged pHEMT eval board - 900MHz Packaged pHEMT eval board - 1.85GHz Packaged pHEMT eval board - 2.0GHz Packaged pHEMT eval board - 2.4GHz Packaged pHEMT eval board - 5.3 to 5.75GHz
APPLICATION NOTES & DESIGN DATA:
Application Notes and design data including Sparameters are available on request.
EB750DFN-AJ
9
Specifications subject to change without notice Filtronic Compound Semiconductors Ltd Fax: +44 (0) 1325 306177 Email: sales@filcs.com
Tel: +44 (0) 1325 301111
Website: www.filtronic.com

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